Processes of interface roughness scattering between Landau levels in quantum well structures
The dependence of carrier scattering processes on interface roughness in the system of Landau Levels in quantum well structures within a quantized magnetic field is investigated. An analytical expression calculating the rate of transitions in the structures with an arbitrary potential profile in a tilted magnetic field was obtained. This expression was applied for getting the dependence of scattering time in A3B5 based quantum well structures with different potential profiles, any magnitude and orientation of the magnetic field with respect to the structure layer. Single quantum wells, as well as complex quantum well structures with an asymmetrical design, were also considered. It has been shown that in a case where a Landau level of an upper subband is in resonance with a Landau level of the lower subband, the intersubband scattering rate on interface roughness becomes quite high and, thus, can contribute to the intersubband relaxation of charge carriers in such a system. It has been also shown that this scattering mechanism can be substantially suppressed in structures with the asymmetric potential profile in a tilted magnetic field. Further, the relation between scattering rate in a tilted magnetic field and scattering rate in a parallel magnetic field is shown to be the general function of the general combination of distance between the centers of subband wave functions, magnitude and orientation of the magnetic field.
This work has been performed under the supervision of Telenkov M.P. Ph.D., Associate Professor at the Department of Theoretical Physics and Quantum Technologies (TPQT), MISiS. The author also wishes to thank the Ph.D. student of the TPQT department Doan The Ngo Vinh for his help in obtaining and analyzing the results.
Scientific adviser - Ph.D. Telenkov М.P.