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Energy relaxation in superconducting boron-doped diamond films

Scientific organization
Moscow State Pedagogical University
Academic degree
Scientific discipline
Physics & Astronomy
Energy relaxation in superconducting boron-doped diamond films
The research is dedicated to the experimental study of the energy relaxation time of the electron system in thin boron-doped diamond films at low temperatures. The main results confirm that the energy relaxation time in the studied samples is due to the electron-phonon scattering time which is material- and temperature- dependent. The experimental results are important for the development of sensitive superconducting bolometers and resonator-based detectors for optical and infrared (THz) radiation.
electron-phonon interaction, superconducting boron-doped diamond

We report on our study of the relaxation time of the resistive superconducting state in single-crystalline boron-doped diamond films performed with the technique of amplitude-modulated absorption of (sub-) THz radiation. The films have a carrier density of about 2.5×1021 cm-3, a critical temperature of about 2 K and a high normal-state resistivity ρn~1500 μΩ·cm. Our main result is that the slow electron-phonon relaxation time at low temperatures is governed by a T-2-dependence with a value of 0.7 μs at T = 1.7 K. The high normal-state resistivity and remarkably slow electron-phonon relaxation confirm that superconducting boron-doped diamond films are a prospective material for ultrasensitive superconducting bolometers and resonator detectors. 

A. Kardakova, A. Shishkin, A. Semenov, S. Ryabchun, J. Bousquet, D. Eon, B. Sacépé, Th. Klein, E. Bustarret, G. N. Goltsman, and T. M. Klapwijk, Relaxation of the resistive superconducting state in superconducting boron-doped diamond, Phys. Rev. B 93, 064506 (2016)