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Boron Nitride Nanomaterials: Current Status of Developments and Applications

Name
Dmitry
Surname
Golberg
Scientific organization
National Institute for Materials Science, "NIMS", Tsukuba, Japan
Academic degree
Professor
Position
Group Leader, Principal Investigator
Scientific discipline
New materials, Manufacturing technologies & Processes
Topic
Boron Nitride Nanomaterials: Current Status of Developments and Applications
Abstract
This talk will give an introduction to the rich Boron Nitride nanotube/nanosheet/nanoparticle field, including the latest achievements in the synthesis, structural analyses, property evaluations and industrial applications, and presents the purpose and significance of this direction in the light of the general Nanomaterial/Nanotechnology developments.
Keywords
boron nitride, nanotubes, nanosheets, nanoparticles, chemical vapor deposition, spark plasma sintering, high pressure torsion, transmission electron microscopy,
Summary

Hexagonal boron nitride (h-BN) is a layered material with a graphite-like structure in which planar networks of BN hexagons are regularly stacked. As the structural analogue of a carbon nanotube (CNT), BN nanotube (BNNT) was firstly predicted in 1994, since then, it has become one of the most intriguing non-carbon nanotubes. Compared with metallic or semiconducting CNTs, a BNNT is an electrical insulator with a bandgap of ca. 5 eV, basically independent of tube geometry. In addition, BNNTs possess  high chemical stability, excellent mechanical properties and one of the highest thermal conductivities among of materials on Earth. The same advantages are applicable to a graphene analogue - a monoatomic layer of a hexagonal BN. Such unique properties make BN nanotubes, nanosheets and various types of nanoparticles a promising nanomaterial in a variety of potential fields such as optoelectronic nanodevices, waveguides, functional polymer and light metal matrix, and ceramic composites, hydrogen accumulators, water cleaners, electrically insulating substrates perfectly matching the CNT and graphene lattices.

The presenter is one of the founders of the booming nano-Boron-Nitride world research, in which he is continuosly engaged since 1994 and is one of the most influential world researchers in the general field of nanomaterials and nanotechnolgy. Golberg is included into the top 150 world most cited material scientists on the Web of Science, while having more than 600 publications in the International Journals, which yielded more that 25.000 citations and a Hirsh factor of 84, and over 100 Japanese and International patents. His numerous awards include 2005 Tsukuba Prize for his developments of nanomaterial syntheses, 2012 Thomson Reuters Research Front Award for his studies of inorganic nanotubes and nanowires, 2014 "Seto" Award from the Japanese Microscopy Society to the best electron microscopist in Japan over the year, and 2016 NIMS President Prize. In 2016 he was also elected as an Australian Laureate Fellow. Thomson Reuters nominated Golberg as a Highly Cited Researcher in the consecutive years of 2014 and 2015. At present, Golberg is a Nanotube Group Leader and a Principal Investigator within the World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA) of the National Institute for Materials Science (NIMS) in Tsukuba, Japan,  and a Full Professor of the University of Tsukuba. His current research focuses on nanoscale material electromechanical, thermal, optoelectronic and photovoltaic property analysis using developed by him and his group state-of-the art methods of in situ transmission electron microscopy.